Individual β-Ga2O3 nanowires as solar-blind photodetectors

被引：195

作者：

Feng, P

Zhang, JY

Li, QH

Wang, TH ^{[1
]}

机构：

[1] Hunan Univ, Micro Nano Technol Res Ctr, Changsha 410082, Peoples R China

[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 15期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2193463

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Individual beta-Ga2O3 nanowires as solar-blind photodetectors are investigated. The detectors show encouraging advantages to 254 nm light. The dark current is on the order of pA. The conductance of the nanowire increases by about three orders of magnitude under 254 nm ultraviolet illumination. The upper limits of the response and recovery time are 0.22 and 0.09 s, respectively. These results indicate that beta-Ga2O3 nanowires have potential applications in realizing future miniaturized solar-blind photodetectors.

引用

页数：3

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