Low-stress sputtered chromium-nitride hardmasks for x-ray mask fabrication

被引：13

作者：

Tsuboi, S ^{[1
]}

Kotsuji, S ^{[1
]}

Yoshihara, T ^{[1
]}

Suzuki, K ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 06期

关键词：

D O I：

10.1116/1.589619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed low-stress chromium nitride (CrN) films as hardmasks for x-ray absorber etching. The stress in the CrN films is 3 MPa and its distribution (gradient) is less than 10 MPa in a 25x25 mm area. In addition, the CrN film is electrically conductive (1.4 Omega/square). We have fabricated 0.10 mu m line-and-space patterns in 0.4-mu m-thick tantalum germanide using a 75-nm-thick CrN hardmask. The results demonstrate that a sputtered CrN film is an excellent hardmask material for x-ray mask fabrication. (C) 1997 American Vacuum Society.

引用

页码：2228 / 2231

页数：4

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