TA FILM PROPERTIES FOR X-RAY MASK ABSORBERS

被引：25

作者：

ODA, M

OZAWA, A

OHKI, S

YOSHIHARA, H

机构：

[1] NTT LSI Laboratories, Atsugi-shi

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

X-RAY LITHOGRAPHY; X-RAY MASK; TA; ABSORBER; STRESS;

D O I：

10.1143/JJAP.29.2616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of absorber materials for X-ray masks which can be patterned by a subtractive process are investigated. Highly pure film can be deposited using Xe rather than Ar as a working gas of RF sputtering. The stress of the Ta film can be controlled more precisely than either Re or W. Ta film deposited by RF sputtering is highly oriented, and has a high purity and a high density. Furthermore, its stress does not change even after annealing at 400-degrees-C.

引用

页码：2616 / 2619

页数：4

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