X-RAY-LITHOGRAPHY - NOVEL FABRICATION PROCESS FOR SIC/W STEPPERMASKS

被引：10

作者：

LUTHJE, H

HARMS, M

MATTHIESSEN, B

BRUNS, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 11期

关键词：

D O I：

10.1143/JJAP.28.2342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2342 / 2347

页数：6

共 11 条

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[3]

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[4]

Luthje H., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V773, P15, DOI 10.1117/12.940348

[5]

LUTHJE H, 1987, MICROELECTRON ENG, V6, P259

[6]

LUTHJE H, 1984, PHILIPS TECH REV, V41

[7]

Mackens U., 1989, Microelectronic Engineering, V9, P89, DOI 10.1016/0167-9317(89)90020-8

[8] OXIDATION OF SILICON-CARBIDE IN A WET ATMOSPHERE [J].

MAEDA, M ;

NAKAMURA, K ;

OHKUBO, T .

[9]

Yamada M., 1989, Microelectronic Engineering, V9, P135, DOI 10.1016/0167-9317(89)90031-2

[10]

Yoshioka N., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V923, P2, DOI 10.1117/12.945626