FULLY SCALED 0.5 MU-M METAL-OXIDE SEMICONDUCTOR CIRCUITS BY SYNCHROTRON X-RAY-LITHOGRAPHY - MASK FABRICATION AND CHARACTERIZATION

被引：21

作者：

VISWANATHAN, R ^{[1
]}

ACOSTA, RE ^{[1
]}

SEEGER, D ^{[1
]}

VOELKER, H ^{[1
]}

WILSON, A ^{[1
]}

BABICH, I ^{[1
]}

MALDONADO, J ^{[1
]}

WARLAUMONT, J ^{[1
]}

VLADIMIRSKY, O ^{[1
]}

HOHN, F ^{[1
]}

CROCKATT, D ^{[1
]}

FAIR, R ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2196 / 2201

页数：6

共 4 条

[1]

ACOSTA RE, 1983, P SOC PHOTO, V448, P114

[2] FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION [J].

SILVERMAN, JP ;

DIMILIA, V ;

KATCOFF, D ;

KWIETNIAK, K ;

SEEGER, D ;

WANG, LK ;

WARLAUMONT, JM ;

WILSON, AD ;

CROCKATT, D ;

DEVENUTO, R ;

HILL, B ;

HSIA, LC ;

RIPPSTEIN, R .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2147-2152

[3]

VISWANATHAN R, 1983, P SPIE, V448, P19

[4] ELECTRON-BEAM SYSTEMS FOR PRECISION MICRON AND SUB-MICRON LITHOGRAPHY [J].

WILSON, AD .

PROCEEDINGS OF THE IEEE, 1983, 71 (05) :575-584

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