FABRICATION OF FULLY SCALED 0.5-MU-M N-TYPE METAL-OXIDE SEMICONDUCTOR TEST DEVICES USING SYNCHROTRON X-RAY-LITHOGRAPHY - OVERLAY, RESIST PROCESSES, AND DEVICE FABRICATION

被引:32
作者
SILVERMAN, JP [1 ]
DIMILIA, V [1 ]
KATCOFF, D [1 ]
KWIETNIAK, K [1 ]
SEEGER, D [1 ]
WANG, LK [1 ]
WARLAUMONT, JM [1 ]
WILSON, AD [1 ]
CROCKATT, D [1 ]
DEVENUTO, R [1 ]
HILL, B [1 ]
HSIA, LC [1 ]
RIPPSTEIN, R [1 ]
机构
[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期
关键词
D O I
10.1116/1.584104
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2147 / 2152
页数:6
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