New transparent conductors with the M7O12 ordered oxygen-deficient fluorite structure:: from In4Sn3O12 to In5.5Sb1.5O12

被引:17
作者
Choisnet, J [1 ]
Bizo, L [1 ]
Retoux, R [1 ]
Hébert, S [1 ]
Raveau, B [1 ]
机构
[1] Inst Sci Mat & Rayonnement, CNRS, UMR 6508, CRISMAT, F-14050 Caen, France
关键词
indium tin antimonates; transparent conductors; oxygen-deficient fluorite type; indium-antimony ordering;
D O I
10.1016/j.jssc.2004.07.039
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A new transparent conductor, containing pentavalent antimony, In4+xSn3-2xSbxO12, has been synthesized for 0less than or equal toxless than or equal to1.5. The latter exhibits an ordered oxygen-deficient fluorite structure with an ordered distribution of Sb5+ and In3+/Sn4+ species in the octahedral and seven-fold coordinated sites, respectively. More importantly, it is shown that the electronic conductivity of this transparent conducting oxide (TCO) at room temperature, is one order of magnitude larger for x = 1 (In5SnSbO12) than for x = 0 (In4Sn3O12) and it turns to a semi-metallic behavior in contrast to In4Sn3O12 which is a semi-conductor. The potential of this new material, as TCO, is also shown by its reflectance spectra, similar to In4Sn3O12, involving only a small increase of the optical bandgap, by 0.15 eV. (C) 2004 Elsevier Inc. All rights reserved.
引用
收藏
页码:3748 / 3751
页数:4
相关论文
共 21 条
[1]   Electrical, optical, and structural properties of tin-doped In2O3-M2O3 solid solutions (M = Y, Sc) [J].
Ambrosini, A ;
Duarte, A ;
Poeppelmeier, KR ;
Lane, M ;
Kannewurf, CR ;
Mason, TO .
JOURNAL OF SOLID STATE CHEMISTRY, 2000, 153 (01) :41-47
[2]  
BATES JL, 1986, AM CERAM SOC BULL, V65, P673
[3]  
CHOISNET J, 1989, MAT RES B, V22, P1355
[4]  
ENOKI H, 1992, PHYS STATUS SOLIDI A, V132, P151
[5]  
ENOKI H, 1975, J MATER SCI, V13, P192
[6]   ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].
FRANK, G ;
KOSTLIN, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206
[7]   Chemical and thin-film strategies for new transparent conducting oxides [J].
Freeman, AJ ;
Poeppelmeier, KR ;
Mason, TO ;
Chang, RPH ;
Marks, TJ .
MRS BULLETIN, 2000, 25 (08) :45-51
[8]   Transparent conducting oxides [J].
Ginley, DS ;
Bright, C .
MRS BULLETIN, 2000, 25 (08) :15-18
[9]  
HAINES WG, 1978, J APPL PHYS, V49, P223
[10]  
HARTNAGEL H., 1995, Semiconducting Transparent Thin Films