Dielectric behavior of PbZr0.52Ti0.48O3 thin films:: Intrinsic and extrinsic dielectric responses

被引:33
作者
Ang, C [1 ]
Yu, Z
机构
[1] Univ Akron, Dept Phys, Akron, OH 44325 USA
[2] Univ Akron, Dept Chem, Akron, OH 44325 USA
关键词
D O I
10.1063/1.1808233
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dc electric-field (E) dependence of the dielectric constant (epsilon) in PbZr0.52Ti0.48O3 (PZT) thin films has been studied at cryogenic temperatures in the dc electric-field range of 0-820 kV/cm. Significant suppression of epsilon is observed by an application of E up to 400 kV/cm. The relation of epsilon versus E can be well described by the "multi-polarization mechanism" model, i.e., epsilon(E)=epsilon(0)/[1+alpha epsilon(0)E-3(2)](1/3)+(P(j)x(j)/epsilon(0)) [cosh(Ex(j))](-2). By this equation, the field dependence of the extrinsic dielectric response can be subtracted from the whole dielectric response. The results indicate that the analysis of the relation of epsilon versus E could be a way to separate the intrinsic and extrinsic contributions in PZT. (C) 2004 American Institute of Physics.
引用
收藏
页码:3821 / 3823
页数:3
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