Improvement of peak-to-background ratio in PIXE and XRF methods using thin Si-PIN detectors

被引:14
作者
Karydas, AG [1 ]
Zarkadas, C
Kyriakis, A
Pantazis, J
Huber, A
Redus, R
Potiriadis, C
Paradellis, T
机构
[1] NCSR Demokritos, Inst Nucl Phys, Lab Mat Anal, GR-15310 Athens, Greece
[2] Amptek Inc, Bedford, MA 01730 USA
[3] Greek Atom Energy Commiss, Athens 15310, Greece
关键词
D O I
10.1002/xrs.621
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
This paper describes the peak-to-background ratio improvement that can be achieved in PIXE and XRF applications by the use of thin crystal detectors. This improvement becomes apparent in the presence of an intense gamma-ray source, which can be produced either during proton irradiation of a sample (PIXE) or in the deexcitation of the radionuclide in radioisotope-induced XRF analysis (RIXRF). In order to study theoretically the energy response of a silicon crystal in the x-ray energy region with respect to its thickness and the energy of the incident gamma-radiation, a Monte Carlo simulation was performed. Experimentally, two detectors having crystal thicknesses of 300 mum and 3 mm. were employed in specific analytical applications of PIXE, PIXE-induced XRF and RIXRF techniques. The peak-to-background ratios obtained for various characteristic x-rays were compared between the two detectors. The performances of the two detectors were also compared in the monochromatic XRF analysis of samples with low average atomic number matrix content. Copyright (C) 2003 John Wiley Sons, Ltd.
引用
收藏
页码:93 / 105
页数:13
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