Sputter deposition conditions and penetration depth in NbN thin films

被引:7
作者
Hu, R [1 ]
Kerber, GL
Luine, J
Ladizinsky, E
Bulman, J
机构
[1] TRW Co Inc, Div Elect & Technol, Redondo Beach, CA 90278 USA
[2] Loyola Marymount Univ, Los Angeles, CA 90045 USA
关键词
NbN; penetration depth; TiN;
D O I
10.1109/TASC.2003.812227
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NbN films have been reactively sputter deposited from a 15.24 cm Nb target using a variety of deposition conditions. Film penetration depth has been measured using Taber's parallel plate resonator technique. These measurements have been compared with penetration depth measurements obtained from SQUID measurements. Penetration depth results have also been correlated with film superconducting transition temperature, resistivity, resistance ratio, and x-ray diffraction patterns. The films have been deposited over a variety of substrates and buffer layers including oxidized Si, sapphire, and a variety of metal and metal nitride "seed" layers.
引用
收藏
页码:3288 / 3291
页数:4
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