The drift-diffusion equation revisited

被引：20

作者：

Assad, F ^{[1
]}

Banoo, K ^{[1
]}

Lundstrom, M ^{[1
]}

机构：

[1] Purdue Univ, W Lafayette, IN 47907 USA

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(97)00263-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The drift-diffusion equation for carrier transport in semiconductors is reconsidered from the perspective of scattering theory. Reasons for its continued success in describing sub-micron devices are established, conditions for which it loses validity are identified, and prospects for its continued use are considered. (C) 1998 Elsevier Science Ltd. All rights reserved.

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收藏

页码：283 / 295

页数：13

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