Polytypic transformations in SiC

被引：26

作者：

Pirouz, P ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA

来源：

SOLID STATE PHENOMENA | 1997年 / 56卷

关键词：

SiC; semiconductors; twinning; polytypism; phase transformations;

D O I：

10.4028/www.scientific.net/SSP.56.107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A dislocation mechanism for twinning and polytypic transformations in tetrahedrally coordinated semiconductors, with particular emphasis on SiC which has an exceptionally low stacking fault energy, is presented. The model is based on the structure of tetrahedrally co-ordinated materials, and an asymmetry in the mobility of partial dislocations in them. This difference in mobility is attributed to the different core structure of partial dislocations in these materials.

引用

页码：107 / 132

页数：26

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