Charge transport mechanism in a typical Au/CdTe Schottky diode

被引：31

作者：

Mathew, X ^{[1
]}

Enriquez, JP

Sebastian, PJ

Pattabi, M

Sanchez-Juarez, A

Campos, J

McClure, JC

Singh, VP

机构：

[1] Univ Nacl Autonoma Mexico, Ctr Invest Energia, Solar Mat Dept, Solar Hydrogen Fuel Cell Grp, Temixco 62580, Morelos, Mexico

[2] Univ Texas, Dept Met & Mat Engn, El Paso, TX 79968 USA

[3] Univ Kentucky, Dept Elect & Comp Engn, Lexington, KY USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2000年 / 63卷 / 04期

关键词：

CdTe; electrodeposition; I-V; Poole-Frenkel conduction; Schottky conduction;

D O I：

10.1016/S0927-0248(00)00055-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The charge transport mechanism in a typical-Au/CdTe Schottky diode has been investigated. Evidence for different types of charge transport at different temperature regions has been observed. The dominant transport mechanism in the 100-300K region is identified as the Poole-Frenkel type. The activation energy of the trap level detected in the 100-300K temperature range shows a voltage dependence. The transport mechanism changes ata characteristic temperature of about 270 K. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：355 / 365

页数：11

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