Dielectric and ferroelectric properties of Ta-doped bismuth titanate

被引：58

作者：

Hong, SH ^{[1
]}

Horn, JA

Trolier-McKinstry, S

Messing, GL

机构：

[1] Penn State Univ, Mat Res Lab, University Pk, PA 16802 USA

[2] Penn State Univ, Particulate Mat Ctr, University Pk, PA 16802 USA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 18期

关键词：

Bismuth titanate - Curie temperature;

D O I：

10.1023/A:1006722312423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of Ta-doping on microstructure, dielectric, and piezoelectric properties of bismuth titanate (BIT) were investigated, and the results were compared with Nb-doped BIT. The microstructure of BIT ceramics was strongly affected by the Ta-doping concentration, reducing the dielectric loss and improving poling conditions.

引用

页码：1661 / 1664

页数：4

共 8 条

[1]

BROOKS HS, 1993, 3 EUROCERAMICS, V2, P199

[2]

HONG SH, IN PRESS J AM CERAM

[3] Templated grain growth of textured bismuth titanate [J].

Horn, JA ;

Zhang, SC ;

Selvaraj, U ;

Messing, GL ;

Trolier-McKinstry, S .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1999, 82 (04) :921-926

[4]

LOPATIN SS, 1988, INORG MATER+, V24, P1328

[5] Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate [J].

Shulman, HS ;

Testorf, M ;

Damjanovic, D ;

Setter, N .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (12) :3124-3128

[6] PREPARATION AND EPITAXY OF SPUTTERED FILMS OF FERROELECTRIC BI4TI3O12 [J].

TAKEI, WJ ;

FORMIGONI, NP ;

FRANCOMBE, MH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (03) :442-+

[7]

WU SY, 1979, J APPL PHYS, V50, P4314, DOI 10.1063/1.326415

[8]

XU Y, 1991, FERROELECTRIC MAT TH, P307

← 1 →