Structural and optical properties of P-Ga codoping ZnO thin films deposited by magnetron sputtering

被引:15
作者
Wang, Q. P. [1 ]
Sun, Z. [1 ]
Du, J. [1 ]
Zhao, P. [1 ]
Wu, X. H. [1 ]
Zhang, X. J. [1 ]
机构
[1] Shandong Univ, Sch Phys & Microelect, Shandong 250100, Peoples R China
基金
中国国家自然科学基金;
关键词
P-type ZnO film; magnetron sputtering; P-Ga codoping;
D O I
10.1016/j.optmat.2006.05.010
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
The P-Ga codoping ZnO thin films have been prepared on sapphire substrates by magnetron sputtering. Structural, optical and electrical properties of ZnO film were investigated using X-ray diffraction meter, transmittance spectra and resistivity, respectively. The obtained films were polycrystalline with the hexagonal structure, and a preferred orientation (0002) with the c-axis perpendicular to the substrates. The ZnO thin films became P-type after annealing. We have observed a room resistivity of 0.37 Q cm and a carrier concentration of 1.6 x 10(18) cm(-3) in P-type ZnO film. (c) 2006 Published by Elsevier B.V.
引用
收藏
页码:1358 / 1361
页数:4
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