Localized states in the active region of blue LEDs related to a system of extended defects

被引：7

作者：

Davydov, D. V. ^{[1
]}

Zakgeim, A. L. ^{[1
]}

Snegov, F. M. ^{[1
]}

Sobolev, M. M. ^{[1
]}

Chernyakov, A. E. ^{[1
]}

Usikov, A. S. ^{[1
]}

Shmidt, N. M. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063785007020150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Blue light-emitting diodes (LEDs) based on InGaN/GaN quantum wells (QWs) with different characters of the system of extended defects (SEDs) threading through the active region have been studied using the current-voltage (I-U), capacitance-voltage (C-V), and deep-level transient spectroscopy (DLTS) measurements in the dark and under illumination with white light in a temperature range from 100 to 450 K. The DLTS curves exhibit broad E1 and E2 peaks with amplitudes dependent on the illumination. This behavior can be explained assuming the presence of localized states related to SEDs in the active region of the LED. The LEDs with more developed SEDs are characterized by a greater concentration of donor-type traps, which leads to an increase in the density of free charge carriers in QWs, which screen the electron-hole interaction. This circumstance can be among the factors responsible for a severalfold decrease in the quantum efficiency of such LEDs.

引用

页码：143 / 146

页数：4

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