GENERATION OF THE EL2 DEFECT IN N-GAAS IRRADIATED BY HIGH-ENERGY PROTONS

This paper presents the results of the DLTS study of irradiation-induced defects in n-GaAs irradiated by 6.7 MeV protons at T = 300 K. It has been found that the irradiation produces the EL2 defect showing the persistent photoquenching (PPQ) effect. With increasing irradiation dose PHIp greater-than-or-equal-to 1 x 10(11) cm-2 the concentration of irradiation-induced defects grows and their interaction becomes stronger. This changes the electrical properties of the EL2 defect: the thermal activation energy and the charge carrier cross section change. The experimental data permit the EL2 to be identified as the isolated antisite defect As(Ga).