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NATIVE DEFECTS IN GALLIUM-ARSENIDE
被引:288
作者
:
BOURGOIN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
BOURGOIN, JC
[
1
]
VONBARDELEBEN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
VONBARDELEBEN, HJ
[
1
]
STIEVENARD, D
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
STIEVENARD, D
[
1
]
机构
:
[1]
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
来源
:
JOURNAL OF APPLIED PHYSICS
|
1988年
/ 64卷
/ 09期
关键词
:
D O I
:
10.1063/1.341206
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:R65 / R91
页数:27
相关论文
共 294 条
[1]
POTENTIAL FLUCTUATIONS OF WELL-DEFINED MAGNITUDE SUPERIMPOSED TO A GAUSSIAN DISTRIBUTION - EFFECT OF ANNEALING IN SEMI-INSULATING GAAS
ABDALLA, S
论文数:
0
引用数:
0
h-index:
0
ABDALLA, S
PISTOULET, B
论文数:
0
引用数:
0
h-index:
0
PISTOULET, B
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(07)
: 2646
-
2650
[2]
ALNOT P, UNPUB
[3]
[Anonymous], 1981, POINT DEFECTS SEMICO
[4]
[Anonymous], POINT DEFECTS SEMICO
[5]
NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE
ASHBY, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ASHBY, A
ROBERTS, GG
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ROBERTS, GG
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ASHEN, DJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
MULLIN, JB
[J].
SOLID STATE COMMUNICATIONS,
1976,
20
(01)
: 61
-
63
[6]
MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
AUGUSTUS, PD
论文数:
0
引用数:
0
h-index:
0
AUGUSTUS, PD
STIRLAND, DJ
论文数:
0
引用数:
0
h-index:
0
STIRLAND, DJ
[J].
JOURNAL OF MICROSCOPY,
1980,
118
(JAN)
: 111
-
116
[7]
ANNEALING OF ELECTRON-IRRADIATED GAAS
AUKERMAN, LW
论文数:
0
引用数:
0
h-index:
0
AUKERMAN, LW
GRAFT, RD
论文数:
0
引用数:
0
h-index:
0
GRAFT, RD
[J].
PHYSICAL REVIEW,
1962,
127
(05):
: 1576
-
&
[8]
A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS
AURET, FD
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
AURET, FD
LEITCH, AWR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
LEITCH, AWR
VERMAAK, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
VERMAAK, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(01)
: 158
-
163
[9]
DEEP LEVEL TRANSIENT SPECTROSCOPY OF HOLE DEFECTS IN BULK-GROWN P-GAAS USING SCHOTTKY-BARRIER DIODES
AURET, FD
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
AURET, FD
NEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
NEL, M
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(02)
: 130
-
132
[10]
ASGA ANTISITE DEFECT IN GAAS
BACHELET, GB
论文数:
0
引用数:
0
h-index:
0
BACHELET, GB
SCHLUTER, M
论文数:
0
引用数:
0
h-index:
0
SCHLUTER, M
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW B,
1983,
27
(04):
: 2545
-
2547
←
1
2
3
4
5
6
7
8
9
10
→
共 294 条
[1]
POTENTIAL FLUCTUATIONS OF WELL-DEFINED MAGNITUDE SUPERIMPOSED TO A GAUSSIAN DISTRIBUTION - EFFECT OF ANNEALING IN SEMI-INSULATING GAAS
ABDALLA, S
论文数:
0
引用数:
0
h-index:
0
ABDALLA, S
PISTOULET, B
论文数:
0
引用数:
0
h-index:
0
PISTOULET, B
[J].
JOURNAL OF APPLIED PHYSICS,
1985,
58
(07)
: 2646
-
2650
[2]
ALNOT P, UNPUB
[3]
[Anonymous], 1981, POINT DEFECTS SEMICO
[4]
[Anonymous], POINT DEFECTS SEMICO
[5]
NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE
ASHBY, A
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ASHBY, A
ROBERTS, GG
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ROBERTS, GG
ASHEN, DJ
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
ASHEN, DJ
MULLIN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
NEW UNIV ULSTER,SCH PHYS SCI,COLERAINE,NORTH IRELAND
MULLIN, JB
[J].
SOLID STATE COMMUNICATIONS,
1976,
20
(01)
: 61
-
63
[6]
MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE
AUGUSTUS, PD
论文数:
0
引用数:
0
h-index:
0
AUGUSTUS, PD
STIRLAND, DJ
论文数:
0
引用数:
0
h-index:
0
STIRLAND, DJ
[J].
JOURNAL OF MICROSCOPY,
1980,
118
(JAN)
: 111
-
116
[7]
ANNEALING OF ELECTRON-IRRADIATED GAAS
AUKERMAN, LW
论文数:
0
引用数:
0
h-index:
0
AUKERMAN, LW
GRAFT, RD
论文数:
0
引用数:
0
h-index:
0
GRAFT, RD
[J].
PHYSICAL REVIEW,
1962,
127
(05):
: 1576
-
&
[8]
A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS
AURET, FD
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
AURET, FD
LEITCH, AWR
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
LEITCH, AWR
VERMAAK, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
VERMAAK, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1986,
59
(01)
: 158
-
163
[9]
DEEP LEVEL TRANSIENT SPECTROSCOPY OF HOLE DEFECTS IN BULK-GROWN P-GAAS USING SCHOTTKY-BARRIER DIODES
AURET, FD
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
AURET, FD
NEL, M
论文数:
0
引用数:
0
h-index:
0
机构:
Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr
NEL, M
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(02)
: 130
-
132
[10]
ASGA ANTISITE DEFECT IN GAAS
BACHELET, GB
论文数:
0
引用数:
0
h-index:
0
BACHELET, GB
SCHLUTER, M
论文数:
0
引用数:
0
h-index:
0
SCHLUTER, M
BARAFF, GA
论文数:
0
引用数:
0
h-index:
0
BARAFF, GA
[J].
PHYSICAL REVIEW B,
1983,
27
(04):
: 2545
-
2547
←
1
2
3
4
5
6
7
8
9
10
→