DEEP LEVEL TRANSIENT SPECTROSCOPY OF HOLE DEFECTS IN BULK-GROWN P-GAAS USING SCHOTTKY-BARRIER DIODES

Schottky barrier diodes were used to detect and study hole defects in bulk-grown p-type GaAs by deep level transient spectroscopy. Several defects with concentrations of 10**1**3-10**1**6/cm**3 were studied. It was found that two of these defects, with electronic levels at E//v plus 0. 42 eV and E//v plus 0. 58 eV, have electronic properties that closely correspond to those of Cu- and Fe-related defects in GaAs. It is concluded that Schottky barrier diodes on p-GaAs can be very useful to detect and characterize typical metallic contaminants in GaAs.