ELECTRICAL-PROPERTIES OF FE IN GAAS

[1] CRYSTAL-FIELD SPECTRA OF 3DN IMPURITIES IN2-6 AND 3-5 COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 160 (03): : 627 - +

[2] DEEP STATES IN TRANSITION-METAL DIFFUSED GALLIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (03) : 249 - 256

[3] BYKOVSKII VA, 1975, SOV PHYS SEMICOND+, V9, P1204

[4] CLARK MG, 1979, I PHYS C SER, V43, P291

[5] IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1094 - 1096

[6] Demidov E. S., 1977, Soviet Physics - Solid State, V19, P100

[7] DEWIT M, 1963, PHYS REV, V132, P195

[8] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720

[9] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[10] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3740 - 3745

[1] CRYSTAL-FIELD SPECTRA OF 3DN IMPURITIES IN2-6 AND 3-5 COMPOUND SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1967, 160 (03): : 627 - +

[2] DEEP STATES IN TRANSITION-METAL DIFFUSED GALLIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (03) : 249 - 256

[3] BYKOVSKII VA, 1975, SOV PHYS SEMICOND+, V9, P1204

[4] CLARK MG, 1979, I PHYS C SER, V43, P291

[5] IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (12) : 1094 - 1096

[6] Demidov E. S., 1977, Soviet Physics - Solid State, V19, P100

[7] DEWIT M, 1963, PHYS REV, V132, P195

[8] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720

[9] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23): : 5145 - 5155

[10] ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3740 - 3745