IRON DOPING IN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY

被引：5

作者：

COVINGTON, DW

COMAS, J

YU, PW

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] UNIV DAYTON,DEPT PHYS,DAYTON,OH 45469

来源：

关键词：

D O I：

10.1063/1.91884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1094 / 1096

页数：3

共 20 条

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[4] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
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[9] ANNEALING STUDIES OF BE-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY
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