A DEEP LEVEL TRANSIENT SPECTROSCOPY ANALYSIS OF ELECTRON AND HOLE TRAPS IN BULK-GROWN GAAS

被引：57

作者：

AURET, FD

LEITCH, AWR

VERMAAK, JS

机构：

[1] Univ of Port Elizabeth, Port Elizabeth, S Afr, Univ of Port Elizabeth, Port Elizabeth, S Afr

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.336854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

收藏

页码：158 / 163

页数：6

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