Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films

被引：95

作者：

Oh, Byeong-Yun ^{[1
]}

Jeong, Min-Chang ^{[1
]}

Myoung, Jae-Min ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 17期

关键词：

Al-doped ZnO (ZnO : Al); transparent conductive oxide (TCO); hydrogen treatment;

D O I：

10.1016/j.apsusc.2007.02.181

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Al-doped ZnO (ZnO:Al) films prepared by RF magnetron co-sputtering at room temperature were thermally treated in hydrogen ambient at 300 degrees C to enhance the films' characteristics for transparent conductive oxide applications. The electrical properties of the hydrogen-annealed films were improved and preserved in air ambient, evert though the crystal structures of the films were not changed by the thermal treatment. The optical and oxygen bonding characteristics of ZnO:Al films manifested that absorbed oxygen species on the films were removed by the hydrogen-annealing process. These results supported that the development of the electrically reliable ZnO:Al films could be realized using the hydrogen-annealing process. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：7157 / 7161

页数：5

共 22 条

[1] Highly textured and conductive undoped ZnO film using hydrogen post-treatment [J].

Baik, SJ ;

Jang, JH ;

Lee, CH ;

Cho, WY ;

Lim, KS .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3516-3518

[2] DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (111) SI-SIO2 INTERFACE DEFECTS [J].

BROWER, KL .

PHYSICAL REVIEW B, 1990, 42 (06) :3444-3453

[3] Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering [J].

Chen, LY ;

Chen, WH ;

Wang, JJ ;

Hong, FCN ;

Su, YK .

APPLIED PHYSICS LETTERS, 2004, 85 (23) :5628-5630

[4] Growth of ZnO single crystal thin films on c-plane (0 0 0 1) sapphire by plasma enhanced molecular beam epitaxy [J].

Chen, YF ;

Bagnall, DM ;

Zhu, ZQ ;

Sekiuchi, T ;

Park, KT ;

Hiraga, K ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

JOURNAL OF CRYSTAL GROWTH, 1997, 181 (1-2) :165-169

[5] Effects of H2 annealing treatment on photoluminescence and structure of ZnO:Al/Al2O3 grown by radio-frequency magnetron sputtering [J].

Cho, J ;

Yoon, KH ;

Oh, MS ;

Choi, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (10) :H225-H228

[6] BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS [J].

CORDARO, JF ;

SHIM, Y ;

MAY, JE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4186-4190

[7] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

FAN, JCC ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531

[8] Hydrogenated aluminium-doped zinc oxide semiconductor thin films for polymeric light-emitting diodes [J].

Hao, XT ;

Zhu, FR ;

Ong, KS ;

Tan, LW .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (01) :48-54

[9] THE EFFECTS OF ZINC DIFFUSION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ZNO-AL FILMS PREPARED BY RF REACTIVE SPUTTERING [J].

IGASAKI, Y ;

SAITO, H .

THIN SOLID FILMS, 1991, 199 (02) :223-230

[10] Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO [J].

Ip, K ;

Overberg, ME ;

Heo, YW ;

Norton, DP ;

Pearton, SJ ;

Stutz, CE ;

Luo, B ;

Ren, F ;

Look, DC ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (03) :385-387

← 1 2 3 →