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Real-time observation of oxidation and photo-oxidation of rubrene thin films by spectroscopic ellipsometry

被引：62
作者：
Kytka, M.
Gerlach, A.
Schreiber, F.
Kovac, J.
机构：
[1] Univ Tubingen, Inst Angew Phys, D-72076 Tubingen, Germany
[2] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, Bratislava 81219, Slovakia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 13期
基金：
英国工程与自然科学研究理事会;
关键词：
STABILITY; GROWTH; OXYGEN;
D O I：
10.1063/1.2717561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors follow in real time and under controlled conditions the oxidation of the organic semiconductor rubrene grown on SiO2 using spectroscopic ellipsometry. They derive the complex dielectric function epsilon(1)+i epsilon(2) for pristine and oxidized rubrene showing that the oxidation is accompanied by a significant change of the optical properties, namely, the absorption. The authors observe that photo-oxidation of rubrene is orders of magnitude faster than oxidation without illumination. By following different absorption bands (around 2.5 and 4.0 eV for pristine rubrene and around 4.9 eV for oxidized rubrene) they infer that the observed photo-oxidation of these films involves non-Fickian diffusion mechanisms. (c) 2007 American Institute of Physics.
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页数：3
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