Near-field phase-change recording using a GaN laser diode

被引:10
作者
Kishima, K [1 ]
Ichimura, I [1 ]
Yamamoto, K [1 ]
Osato, K [1 ]
Kuroda, Y [1 ]
Iida, A [1 ]
Saito, K [1 ]
机构
[1] Sony Corp, Home Network Co, Dev Ctr, Dev Grp 1,Shinagawa Ku, Tokyo 1410001, Japan
来源
OPTICAL DATA STORAGE 2000 | 2000年 / 4090卷
关键词
solid immersion lens (SIL); blue-violet laser; GaN; near-field recording; gap servo; high numerical-aperture (NA); phase-change (PC) disk; high density recording;
D O I
10.1117/12.399331
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
We developed a 1.5-Numerical-Aperture optical setup using a GaN blue-violet laser diode. We used a 1.0 mm-diameter super-hemispherical solid immersion lens (SIL), and optimized a phase-change (PC) disk structure including the cover layer by the method of MTF simulation. The disk surface was polished by tape burnishing technique. An eye-pattern of (1-7)-coded data at the linear density of 80 nm/bit was demonstrated on the phase-change disk below a 50 nm gap height, which was realized through our air-gap servo mechanism.
引用
收藏
页码:50 / 55
页数:6
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