Free carriers reactivation in mesoporous p+-type silicon by ammonia condensation:: an FTIR study

被引:8
作者
Geobaldo, F
Rivolo, P
Rocchia, M
Rossi, AM
Garrone, E
机构
[1] Politecn Torino, Dipartimento Sci Mat & Ingn Chim, I-10129 Turin, Italy
[2] Ist Elettrotecnico Nazl Galileo Ferraris, Thin Film Lab, I-10135 Turin, Italy
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2003年 / 197卷 / 02期
关键词
D O I
10.1002/pssa.200306544
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of ammonia, in the range of temperatures from approximate to100 K to ambient, on the IR spectrum of p(+)-type silicon (60% porosity) has been investigated. In contrast with the case of NO2 [1], interaction with NH3 at low pressures and room temperature does not cause any reactivation of carriers (as monitored by the loss of transparency in the IR). Extensive reactivation is instead observed at low temperatures and high NH3 pressures, the sample becoming strongly opaque below 2000 cm(-1). When the temperature rises, ammonia is outgassed and the original transparency is restored. Ammonia is an electron-donor molecule, so in principle chemisorption could occur, but plays no role in reactivation, in contrast with the NO2 case. The findings, resembling those reported for polar liquids wetting p(+)-type PS, are explained on the basis of dielectric effects [2]: the observed loss of transparency is related to the presence of a high-density gas filling the pores, possibly in a sort of supercritical state or at the most physisorbed on the walls.
引用
收藏
页码:458 / 461
页数:4
相关论文
共 10 条
[1]   Local environment of Boron impurities in porous silicon and their interaction with NO2 molecules -: art. no. 205308 [J].
Boarino, L ;
Geobaldo, F ;
Borini, S ;
Rossi, AM ;
Rivolo, P ;
Rocchia, M ;
Garrone, E ;
Amato, G .
PHYSICAL REVIEW B, 2001, 64 (20)
[2]  
Boarino L, 2000, PHYS STATUS SOLIDI A, V182, P465, DOI 10.1002/1521-396X(200011)182:1<465::AID-PSSA465>3.0.CO
[3]  
2-G
[4]   NO2 monitoring at room temperature by a porous silicon gas sensor [J].
Boarino, L ;
Baratto, C ;
Geobaldo, F ;
Amato, G ;
Comini, E ;
Rossi, AM ;
Faglia, G ;
Lérondel, G ;
Sberveglieri, G .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :210-214
[5]   Phase transitions of fluids confined in porous silicon: A differential calorimetry investigation [J].
Faivre, C ;
Bellet, D ;
Dolino, G .
EUROPEAN PHYSICAL JOURNAL B, 1999, 7 (01) :19-36
[6]   IR detection of NO2 using p+ porous silicon as a high sensitivity sensor [J].
Geobaldo, F ;
Onida, B ;
Rivolo, P ;
Borini, S ;
Boarino, L ;
Rossi, A ;
Amato, G ;
Garrone, E .
CHEMICAL COMMUNICATIONS, 2001, (21) :2196-2197
[7]   HYDROGEN IN POROUS SILICON - VIBRATIONAL ANALYSIS OF SIHX SPECIES [J].
OGATA, Y ;
NIKI, H ;
SAKKA, T ;
IWASAKI, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (01) :195-201
[8]   OXIDATION OF POROUS SILICON UNDER WATER-VAPOR ENVIRONMENT [J].
OGATA, Y ;
NIKI, H ;
SAKKA, T ;
IWASAKI, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (05) :1595-1601
[9]   Boron in mesoporous Si - Where have all the carriers gone? [J].
Polisski, G ;
Kovalev, D ;
Dollinger, G ;
Sulima, T ;
Koch, F .
PHYSICA B-CONDENSED MATTER, 1999, 273-4 :951-954
[10]   Free charge carriers in mesoporous silicon [J].
Timoshenko, VY ;
Dittrich, T ;
Lysenko, V ;
Lisachenko, MG ;
Koch, F .
PHYSICAL REVIEW B, 2001, 64 (08)