Deep light ion lithography in PMMA - A parameter study

被引：24

作者：

Schrempel, F

Witthuhn, W

机构：

[1] Inst. für Festkörperphysik, Friedrich-Schiller-Univ. Jena, D-07743 Jena

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1997年 / 132卷 / 03期

关键词：

ion irradiation; particle radiation; lithography; LIGA; PMMA; polymethylmethacrylate;

D O I：

10.1016/S0168-583X(97)00449-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Three-dimensional microstructures have been produced in Polymethylmethacrylate (PMMA) by proton irradiations at 1.8 and 6.0 MeV and by irradiation with He+ ions at 1.0 and 1.8 MeV. The irradiated volumes were removed chemically by a properly adjusted etching process. The resulting structures are characterized by a root mean square roughness in the order of a few nanometers. The influence of the dose. the dose rate, the particle energy and the developer temperature is discussed. The parameter range for optimal irradiation and developing conditions is deduced. (C) 1997 Elsevier Science B.V.

引用

页码：430 / 438

页数：9

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