Crystal growth of MgB2

被引：48

作者：

Lee, S ^{[1
]}

机构：

[1] ISTEC, Superconduct Res Lab, Koto Ku, Tokyo 1350062, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2003年 / 385卷 / 1-2期

关键词：

single crystal growth; high pressure growth; flux growth; encapsulation growth; ANISOTROPIC SUPERCONDUCTING PROPERTIES; CUBIC BORON-NITRIDE; SINGLE-CRYSTALS; HIGH-PRESSURE; SYSTEM; TEMPERATURE; TRANSITION; BN-MG3N2;

D O I：

10.1016/S0921-4534(02)02323-7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The problems in MgB2, crystal growth are discussed on the basis of the chemical and thermodynamic information about Mg-B system. After comparing and analyzing the reported crystal growth methods, a novel technique for reproducible crystal growth of MgB2, at a high pressure in Mg-B-N system is presented. The single crystals of sub-millimeter size were grown at P = 5 GPa, T = 1600-1700 degreesC with the temperature gradient of >200 degreesC/cm. For their formation the liquid-assisted solid-state re-crystallization mechanism was proposed. The variation of processing parameters allowed us to control the morphology and superconducting properties of growing crystals. The good quality of single crystals was confirmed by X-ray diffraction, magnetic and resistivity measurements and opened a route for various fundamental studies of MgB2. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：31 / 41

页数：11

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