Metamorphic InP/InGaAs double-heterojunction bipolar transistor structure grown on GaAs by solid source molecular beam epitaxy

被引：1

作者：

Zheng, HQ ^{[1
]}

Radhakrishnan, K ^{[1
]}

Wang, H ^{[1
]}

Yuan, KH ^{[1
]}

Yoon, SF ^{[1
]}

Ng, GI ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/ICIPRM.2000.850225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report, for the first time, metamorphic InP/InGaAs double-heterojunction bipolar transistor (DHBT) structures grown on GaAs substrates by solid source molecular beam epitaxy (SSMBE). A linearly graded InxGa1-xP (x: 0.48 to 1) buffer layer was used to accommodate the strain relaxation. Mesa-type devices were fabricated and characterized. The devices show promising DC and RF performances, indicating the great potential for SSMBE growth of metamorphic InP/InGaAs HBT structures for high speed and high frequency applications.

引用

页码：41 / 44

页数：4

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