Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors

In this article we show the effect on the de and of transport characteristics of dipole doping at the collector heterojunction in an InP/InGaAs double heterojunction bipolar transistor. We show how the switching characteristics of devices with abrupt undoped InGaAs/InP collector heterojunctions can almost be eliminated by using the dipole doping at that interface and how the high-frequency performance is also improved. (C) 1997 American Institute of Physics.