INP/INGAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH SULFUR-DELTA DOPING IN THE COLLECTOR REGION

被引：23

作者：

TOKUMITSU, E ^{[1
]}

DENTAI, AG ^{[1
]}

JOYNER, CH ^{[1
]}

CHANDRASEKHAR, S ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 26期

关键词：

D O I：

10.1063/1.104107

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Sulfur-delta-coping in InP by metalorganic vapor phase epitaxy is reported. A peak carrier concentration of 7 x 10(17) cm-3 with a full width at half maximum of 30 nm has been measured by the electrochemical capacitance-voltage technique. It is shown that by inserting the delta-doping spike in the collector region of InP/InGaAs double heterojunction transistors, the effective barrier height at the base-collector interface can be reduced without increasing the base-collector capacitance and excellent transistor characteristics can be realized.

引用

页码：2841 / 2843

页数：3

共 14 条

[1]

CAPPASO F, 1985, APPL PHYS LETT, V46, P664

[2]

CHANDRASEKHAR S, 1990, PHOTON TECHNOL LETT, V2, P505

[3]

CHEN YK, 1989, ELECTRON DEVICE LETT, V10, P267

[4] INFLUENCE OF AMBIENT MEDIA ON THE OUT-DIFFUSION OF S FROM INP-S [J].

DUTT, BV ;

CHIN, AK ;

CAMLIBEL, I ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) :1630-1635

[5]

ISHIBASHI T, 1990, 48TH ANN DEV RES C S

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[7] MEASUREMENT OF HETEROJUNCTION BAND OFFSETS BY ADMITTANCE SPECTROSCOPY - INP/GA0.47IN0.53AS [J].

LANG, DV ;

PANISH, MB ;

CAPASSO, F ;

ALLAM, J ;

HAMM, RA ;

SERGENT, AM ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :736-738

[8]

MULLER G, 1989, APPL PHYS LETT, V55, P1564, DOI 10.1063/1.102245

[9] HIGH-SPEED INGAAS(P) INP DOUBLE-HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

NOTTENBURG, RN ;

BISCHOFF, JC ;

PANISH, MB ;

TEMKIN, H .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (06) :282-284

[10] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

PATTON, GL ;

COMFORT, JH ;

MEYERSON, BS ;

CRABBE, EF ;

SCILLA, GJ ;

DEFRESART, E ;

STORK, JMC ;

SUN, JYC ;

HARAME, DL ;

BURGHARTZ, JN .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) :171-173

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