One-flux analysis of current blocking in double-heterostructure bipolar transistors with composite collectors

被引:6
作者
McKinnon, WR
机构
[1] Inst. for Microstructural Sciences, National Research Council of Canada, Ottawa
关键词
D O I
10.1063/1.361107
中图分类号
O59 [应用物理学];
学科分类号
摘要
The flux method of McKelvey, Longini, and Brody [Phys. Rev. 123, 51 (1961)] is used to analyze current blocking in double-heterostructure bipolar transistors with composite collectors (CC). The effects of electron accumulation in the spacer layer are included; these are shown to impose an intrinsic limit on the simplest CC design. The analysis is extended to include compositional or band-gap grading, which can substantially reduce the current blocking at high currents, though it has less effect at lower currents.
引用
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页码:2762 / 2770
页数:9
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