Current blocking in InP/InGaAs double heterostructure bipolar transistors

被引：7

作者：

McKinnon, WR

McAlister, SP

Abid, Z

Guzzo, EE

机构：

[1] Inst. for Microstructural Sciences, National Research Council of Canada, Ottawa

[2] Bell Northern Research, Box 2511, Station C, Ottawa

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.361108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The one-flux analysis of double-heterostructure bipolar transistors with composite collectors in the preceding article W. R. McKinnon, J. Appl. Phys. 79, 2762 (1996) is compared to drift-diffusion calculations and to measurements on InP/InGaAs/InP/composite collectors-double heterostructure bipolar transistors. For quantitative agreement we include the effects of ionized impurities in the space-charge regions, and an approximate treatment of Fermi-Dirac statistics.

引用

收藏

页码：2771 / 2778

页数：8

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