EFFECT OF 2-DIMENSIONAL ELECTRON-GAS ON THE DC CHARACTERISTICS OF INALAS INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：11

作者：

HUANG, CH

LIN, HH

机构：

[1] Department of Electrical Engineering, National Taiwan University, Taipei

来源：

SOLID-STATE ELECTRONICS | 1993年 / 36卷 / 09期

关键词：

D O I：

10.1016/0038-1101(93)90158-M

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the characteristics of InAlAs/InGaAs double heterojunction bipolar transistors (DHBT's) with abrupt and graded base-collector junction structures are investigated. We find that because of the large conduction band discontinuity between the InGaAs base and the InAlAs collector, the base-collector abrupt heterojunction notch will accumulate a two-dimensional electron gas (2DEG) and the heterojunction spike will be pushed up. Therefore, poor knee-shape and reach-through effects appear in the device even with a 500 angstrom-thick undoped InGaAs layer sandwiched between the base and collector. This finding has never been observed in DHBT's with small band discontinuity material systems such as InP/InGaAs and AlGaAs/GaAs. The InAlAs/InGaAs DHBT with a graded base-collector junction shows no knee-shape and reach-through effects, because the heterojunction notch has been smoothed out.

引用

页码：1229 / 1234

页数：6

共 16 条

[1] DESIGN OF N-P-N ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].