BAND OFFSET TRANSITIVITY AT THE INGAAS/INALAS/INP(001) HETEROINTERFACES

被引：67

作者：

HYBERTSEN, MS

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 16期

关键词：

D O I：

10.1063/1.105082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

First principles calculations of the valence-band offsets at the lattice-matched In0.53Ga0.47As/In0.52Al0.48As/InP(001) heterointerfaces, including interface strain, exhibit transitivity to within 0.01 eV. The theory is in good agreement with the experimental data and together they suggest the values DELTA-E-upsilon = 0.35-0.41 eV for In0.53Ga0.47As/InP and 0.15-0.20 eV for In0.53Ga0.47As/In0.52Al0.48As. The theory gives DELTA-E-upsilon = 0.25 eV for In0.52Al0.48As/InP, in general agreement with experiment for this less studied interface.

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页码：1759 / 1761

页数：3

相关论文

共 34 条

[1] PHOTOLUMINESCENCE FROM ALLNAS/INP QUANTUM WELLS GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

AINA, L ;

MATTINGLY, M ;

STECKER, L .

APPLIED PHYSICS LETTERS, 1988, 53 (17) :1620-1622

[2]

Capasso F., 1987, HETEROJUNCTION BAND

[3] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[4] SPECTROSCOPY OF EXCITED-STATES IN IN0.53GA0.47AS-INP SINGLE QUANTUM WELLS GROWN BY CHEMICAL-BEAM EPITAXY - COMMENT [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 37 (02) :1011-1012

[5] ADMITTANCE SPECTROSCOPY MEASUREMENT OF BAND OFFSETS IN STRAINED LAYERS OF INXGA1-XAS GROWN ON INP [J].

CAVICCHI, RE ;

LANG, DV ;

GERSHONI, D ;

SERGENT, AM ;

VANDENBERG, JM ;

CHU, SNG ;

PANISH, MB .

APPLIED PHYSICS LETTERS, 1989, 54 (08) :739-741

[6] POSSIBILITY OF HETEROSTRUCTURE BAND OFFSETS AS BULK PROPERTIES - TRANSITIVITY RULE AND ORIENTATION EFFECTS [J].

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1988, 38 (17) :12687-12690

[7] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].

FORREST, SR ;

SCHMIDT, PH ;

WILSON, RB ;

KAPLAN, ML .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201

[8]

FORREST SR, 1987, HETEROJUNCTION BAND, P311

[9]

GERSCHONI D, 1989, PHYS REV B, V399, P5531

[10] EXCITONIC TRANSITIONS IN STRAINED-LAYER INXGA1-XAS/INP QUANTUM WELLS [J].

GERSHONI, D ;

TEMKIN, H ;

PANISH, MB ;

HAMM, RA .

PHYSICAL REVIEW B, 1989, 39 (08) :5531-5534

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