DESIGN OF N-P-N ALGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：3

作者：

CHEN, CZ

LEE, SC

LIN, HH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3976 / 3979

页数：4

共 14 条

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[5]

Hayes J. R., 1983, International Electron Devices Meeting 1983. Technical Digest, P686

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[7]

KRAMER H, 1982, P IEEE, V70, P13

[8] TRANSPORT-THEORY OF THE DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR BASED ON CURRENT BALANCING CONCEPT [J].

LEE, SC ;

LIN, HH .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) :1688-1695

[9] DARK CURRENT REDUCTION IN ALXGA1-XAS-GAAS HETEROJUNCTION DIODES [J].

LEE, SC ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :275-278

[10] SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].

LIN, HH ;

LEE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (08) :839-841

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