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GAALAS/GAAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTORS GROWN BY LPE WITH A CURRENT GAIN OF 50000

被引：9
作者：
CAZARRE, A
TASSELLI, J
MARTY, A
BAILBE, JP
REY, G
机构：
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 24期
关键词：
D O I：
10.1049/el:19850797
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1124 / 1126
页数：3
相关论文
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[2]   THEORY OF A WIDE-GAP EMITTER FOR TRANSISTORS [J].
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[3]  
MARTY A, 1980, THESIS TOULOUSE
[4]  
Shockley W., 1951, U.S. Patent, Patent No. [2,569,347A, 2569347, 2,569,347]
[5]   PERFORMANCE COMPARISON OF HETEROJUNCTION PHOTOTRANSISTORS, P-I-N FETS, AND APD-FETS FOR OPTICAL FIBER COMMUNICATION-SYSTEMS [J].
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FONSTAD, CG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (12) :2259-2261
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