TRANSPORT-THEORY OF THE DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTOR BASED ON CURRENT BALANCING CONCEPT

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 25 - 26

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689

[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[6] AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1758 - 1765

[7] Hayes J. R., 1983, International Electron Devices Meeting 1983. Technical Digest, P686

[8] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767

[9] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 410 - 411

[10] Kromer H., 1982, P IEEE, V70, P13

[1] GAAS/(GA,AL)AS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH BURIED OXYGEN-IMPLANTED ISOLATION LAYERS [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) : 310 - 312

[2] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 25 - 26

[3] CASEY HC, 1979, APPL PHYS LETT, V34, P594, DOI 10.1063/1.90886

[4] Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689

[5] LARGE-SIGNAL BEHAVIOR OF JUNCTION TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (12): : 1761 - 1772

[6] AN INVESTIGATION OF THE EFFECT OF GRADED LAYERS AND TUNNELING ON THE PERFORMANCE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1758 - 1765

[7] Hayes J. R., 1983, International Electron Devices Meeting 1983. Technical Digest, P686

[8] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767

[9] BIPOLAR-TRANSISTOR WITH GRADED BAND-GAP BASE [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 410 - 411

[10] Kromer H., 1982, P IEEE, V70, P13