ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

JALALI, B

NOTTENBURG, RN

HOBSON, WS

CHEN, YK

FULLOWAN, T

PEARTON, SJ

JORDAN, AS

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 22期

关键词：

D O I：

10.1049/el:19891004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1496 / 1498

页数：3

共 13 条

[1]

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[2] SUBPICOSECOND INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

CHEN, YK ;

NOTTENBURG, RN ;

PANISH, MB ;

HAMM, RA ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :267-269

[3] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

FUKANO, H ;

KAWAMURA, Y ;

TAKANASHI, Y .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :312-314

[4] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

HOUSTON, PA ;

BLAAUW, C ;

MARGITTAI, A ;

SVILANS, MN ;

PUETZ, N ;

DAY, DJ ;

SHEPHERD, FR ;

SPRINGTHORPE, AJ .

ELECTRONICS LETTERS, 1987, 23 (18) :931-932

[5] NEAR-IDEAL LATERAL SCALING IN ABRUPT AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

JALALI, B ;

NOTTENBURG, RN ;

CHEN, YK ;

LEVI, AFJ ;

SIVCO, D ;

CHO, AY ;

HUMPHREY, DA .

APPLIED PHYSICS LETTERS, 1989, 54 (23) :2333-2335

[6] HIGH-FREQUENCY SUBMICROMETER AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

JALALI, B ;

NOTTENBURG, RN ;

CHEN, YK ;

SIVCO, D ;

HUMPHREY, DA ;

CHO, AY .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (08) :391-393

[7]

KANBE H, 1984, IEEE ELECTR DEVICE L, V5, P172, DOI 10.1109/EDL.1984.25873

[8]

LEE W, 1986, IEEE ELECTR DEVICE L, V7, P683, DOI 10.1109/EDL.1986.26519

[9] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HUMPHREY, DA ;

HAMM, R .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :30-32

[10] HIGH-CURRENT-GAIN SUBMICROMETER INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HAMM, R ;

HUMPHREY, DA .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :524-526

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