EFFECT OF HOT-ELECTRON INJECTION ON HIGH-FREQUENCY CHARACTERISTICS OF ABRUPT IN0.52(GA1-XALX)0.48AS/INGAAS HBTS

被引：15

作者：

FUKANO, H ^{[1
]}

NAKAJIMA, H ^{[1
]}

ISHIBASHI, T ^{[1
]}

TAKANASHI, Y ^{[1
]}

FUJIMOTO, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 03期

关键词：

D O I：

10.1109/16.123469

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of hot-electron injection energy (E(i)) into the base on the high-frequency characteristics of In0.52(Ga1-xAlx)0.48As/InGaAs abrupt heterojuntion bipolar transistors (HBT's) is investigated by changing the composition of the emitter. It is found that there exists an optimum E(i) at which a maximum current gain cutoff frequency (f(T)) is obtained. Anaysis of hot-electron transport in the base and collector by Monte Carlo simulation is carried out to understand the above phenomenon. The collector transit time (tau(c)) increases with E(i), because electrons with higher energy transfer from the GAMMA valley into the upper L and X valleys. At first, the base transit time (tau(b)) decreases with E(i) at the low E(i) region. However, tau(b) does not decrease monotonically with E(i) for high E(i), because of the large nonparabolicity in the energy-band structure of InGaAs. Consequently, there exists a minimum in the sum of tau(b) and tau(c), in other words a maximum f(T), at an intermediate value of E(i).

引用

页码：500 / 506

页数：7

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