HIGH-FREQUENCY CHARACTERISTICS OF INALAS/INGAAS HBTS

被引：4

作者：

FUKANO, H

KAWAMURA, Y

ASAI, H

TAKANASHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1737 / L1739

页数：3

共 12 条

[1] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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TAKANASHI, Y .

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[2]

FURUKAWA A, 1987, IEEE IEDM, P615

[3]

FUTATSUGI T, 1987, IEDM, P877

[4] INGAAS-INALGAAS HOT-ELECTRON TRANSISTORS WITH CURRENT GAIN OF 15 [J].

IMAMURA, K ;

MUTO, S ;

FUJII, T ;

YOKOYAMA, N ;

HIYAMIZU, S ;

SHIBATOMI, A .

ELECTRONICS LETTERS, 1986, 22 (21) :1148-1150

[5]

ISHIBASHI T, 1988, 20TH C SOL STAT DEV, P515

[6]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[7]

Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P873, DOI 10.1109/IEDM.1988.32948

[8] ELECTRON SPACE-CHARGE EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF ALGAAS/GAAS HBTS UNDER HIGH-CURRENT-DENSITY OPERATION [J].

MORIZUKA, K ;

KATOH, R ;

TSUDA, K ;

ASAKA, M ;

IIZUKA, N ;

OBARA, M .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (11) :570-572

[9] HOT-ELECTRON INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS WITH FT OF 110-GHZ [J].

NOTTENBURG, RN ;

CHEN, YK ;

PANISH, MB ;

HUMPHREY, DA ;

HAMM, R .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (01) :30-32

[10] INGAAS/INALAS HOT-ELECTRON TRANSISTOR [J].

REDDY, UK ;

CHEN, J ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 48 (26) :1799-1801

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