ELECTRON SPACE-CHARGE EFFECTS ON HIGH-FREQUENCY PERFORMANCE OF ALGAAS/GAAS HBTS UNDER HIGH-CURRENT-DENSITY OPERATION

被引：15

作者：

MORIZUKA, K

KATOH, R

TSUDA, K

ASAKA, M

IIZUKA, N

OBARA, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：570 / 572

页数：3

共 8 条

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[7]

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[8] EMITTER BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR CHARACTERISTICS [J].

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