ALGAAS/GAAS HBTS FABRICATED BY A SELF-ALIGNMENT TECHNOLOGY USING POLYIMIDE FOR ELECTRODE SEPARATION

被引：21

作者：

MORIZUKA, K

ASAKA, M

IIZUKA, N

TSUDA, K

OBARA, M

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 11期

关键词：

D O I：

10.1109/55.9288

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：598 / 600

页数：3

相关论文

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