Electronically decoupled films of InSe prepared by van der Waals epitaxy: Localized and delocalized valence states

被引:26
作者
Klein, A [1 ]
Lang, O [1 ]
Schlaf, R [1 ]
Pettenkofer, C [1 ]
Jaegermann, W [1 ]
机构
[1] Hahn Meitner Inst Berlin GmbH, Abt CG, D-14109 Berlin, Germany
关键词
D O I
10.1103/PhysRevLett.80.361
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films.
引用
收藏
页码:361 / 364
页数:4
相关论文
共 19 条
[1]  
[Anonymous], Journal Cardiovasc Med
[2]  
Bastard G., 1988, WAVE MECH APPL SEMIC
[3]   Quantum size effect in the photoemission intensity emitted from thin metal films [J].
Beckmann, A .
SURFACE SCIENCE, 1996, 349 (01) :L95-L100
[4]   VALENCE-BAND PHOTOEMISSION FROM A QUANTUM-DOT SYSTEM [J].
COLVIN, VL ;
ALIVISATOS, AP ;
TOBIN, JG .
PHYSICAL REVIEW LETTERS, 1991, 66 (21) :2786-2789
[5]   ELECTRONIC PROPERTIES OF THE III-VI LAYER COMPOUNDS GAS, GASE AND INSE .1. BAND-STRUCTURE [J].
DONI, E ;
GIRLANDA, R ;
GRASSO, V ;
BALZAROTTI, A ;
PIACENTINI, M .
NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1979, 51 (01) :154-180
[6]   OBSERVATION OF QUANTUM SIZE EFFECTS IN PHOTOEMISSION FROM AG ISLANDS ON GAAS(110) [J].
EVANS, DA ;
ALONSO, M ;
CIMINO, R ;
HORN, K .
PHYSICAL REVIEW LETTERS, 1993, 70 (22) :3483-3486
[7]   Quantum size effects in epitaxial ErAs on GaAs(001) [J].
Ilver, L ;
Kanski, J ;
Wigren, C ;
Karlsson, UO ;
Varekamp, PR .
PHYSICAL REVIEW LETTERS, 1996, 77 (24) :4946-4949
[8]  
Jaegermann W., 1992, PHOTOELECTROCHEM PHO, P195, DOI DOI 10.1007/978-94-015-1301-2_5
[9]   VANDERWAALS EPITAXY - A NEW EPITAXIAL-GROWTH METHOD FOR A HIGHLY LATTICE-MISMATCHED SYSTEM [J].
KOMA, A .
THIN SOLID FILMS, 1992, 216 (01) :72-76
[10]  
LANG O, 1997, THESIS TU BERLIN