Electronically decoupled films of InSe prepared by van der Waals epitaxy: Localized and delocalized valence states

被引：26

作者：

Klein, A ^{[1
]}

Lang, O ^{[1
]}

Schlaf, R ^{[1
]}

Pettenkofer, C ^{[1
]}

Jaegermann, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Abt CG, D-14109 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.80.361

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Submonolayer to several monolayer thick films of the layered semiconductor InSe were deposited on highly oriented pyrolytic graphite by van der Waals epitaxy and probed by energy dependent angle resolved photoelectron spectroscopy. The layers show a transition from two-dimensional bands with atomiclike states to molecularlike states localized along the c direction normal to the surface. The extended band structure showing band dispersion was observed for thicker films.

引用

页码：361 / 364

页数：4

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