Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

被引:74
作者
Giorgis, F
Giuliani, F
Pirri, CF
Tresso, E
Summonte, C
Rizzoli, R
Galloni, R
Desalvo, A
Rava, P
机构
[1] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy
[2] Politecn Torino, Unita Ist Nazl Fis Mat, I-10129 Turin, Italy
[3] CNR, Ist Lamel, I-40129 Bologna, Italy
[4] Univ Bologna, Dipartimento Chim Applicata & Sci Mat, Fac Ingn, I-40136 Bologna, Italy
[5] Elettrorava SPA, I-10040 Turin, Italy
来源
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1998年 / 77卷 / 04期
关键词
D O I
10.1080/13642819808206395
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-electronic quality hydrogenated amorphous silicon-nitrogen (a-Si(1-x)N(x):H) films with an energy gap in the range 1.9-2.7eV have been deposited by plasma-enhanced chemical vapour deposition in silane-ammonia gas mixtures at two different gas residence times and in hydrogen-diluted silane-ammonia gas mixtures. Compositional, structural, electrical and optical properties have been investigated. Far the first time the effects of hydrogen dilution of SiH(4) + NH(3) gas mixtures on the a-Si(1-x)N(x):H network is reported. We have observed that hydrogen dilution decreases hydrogen incorporation and increases nitrogen incorporation, promoting a higher connectivity of the a-Si(1-x)N(x):H network. All films show good electronic properties, comparable with or superior to those of amorphous silicon-carbon films, which are improved in films deposited from hydrogen-diluted gas mixtures.
引用
收藏
页码:925 / 944
页数:20
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