Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

被引：30

作者：

Bano, N. ^{[1
]}

Hussain, I. ^{[1
]}

Nur, O. ^{[1
]}

Willander, M. ^{[1
]}

Wahab, Q. ^{[2
]}

Henry, A. ^{[2
]}

Kwack, H. S. ^{[3
,4
]}

Dang, D. Le Si ^{[3
,4
]}

机构：

[1] Linkoping Univ, Dept Sci & Technol, SE-60174 Norrkoping, Sweden

[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[3] CEA, CNRS, Grp Nanophys & Semicond, Inst Neel, F-38042 Grenoble, France

[4] Univ Grenoble 1, F-38042 Grenoble, France

来源：

JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 06期

关键词：

ZnO nanorods; Cathodoluminescence; Deep level luminescence; ZNO; NANOSTRUCTURES; PENETRATION;

D O I：

10.1016/j.jlumin.2010.01.006

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Optical properties of ZnO nanorods (NRs) grown by vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates were probed by cathodoluminescence (CL) measurements at room temperature and at 5 K complemented with electroluminescence. At room temperature the CL spectra for defect related emission intensity was enhanced with the electron beam penetration depth. We observed a variation in defect related green emission along the nanorod axis. This indicates a relatively poor structural quality near the interface between ZnO NRs and p-SiC substrate. We associate the green emission with oxygen vacancies. Analysis of the low-temperature (5 K) emission spectra in the UV region suggests that the synthesized nanorods contain shallow donors and acceptors. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：963 / 968

页数：6

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