Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces

被引：14

作者：

Brillson, L. J. ^{[1
,2
,3
]}

Mosbacker, H. L. ^{[2
]}

Doutt, D. L. ^{[2
]}

Dong, Y. ^{[3
]}

Fang, Z. -Q. ^{[4
,5
]}

Look, D. C. ^{[4
,5
]}

Cantwell, G. ^{[6
]}

Zhang, J. ^{[6
]}

Song, J. J. ^{[6
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[3] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

[4] Wright State Univ, Semicond Res Ctr, Dayton, OH 45433 USA

[5] USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

[6] ZN Technol Inc, Brea, CA 92821 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 4-5期

基金：

美国国家科学基金会;

关键词：

Cathodoluminescence spectroscopy; ZnO; Defects; Surface; Interface; Scanning electron microscope; Atomic force microscopy; Kelvin probe force microscopy; ATOMIC DIFFUSION; DEFECTS; MORPHOLOGY; STATES;

D O I：

10.1016/j.spmi.2008.11.008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic properties of ZnO surfaces and interfaces has until recently been relatively unexplored. We have used a complement of ultrahigh vacuum scanning electron microscope (SEM)-based, depth-resolved cathodoluminescence spectroscopy (DRCLS), temperature-dependent charge transport, trap spectroscopy, and surface science techniques to probe the electronic and chemical properties of clean surfaces and interfaces on a nanometer scale. DRCLS reveals remarkable nanoscale correlations of native point defect distributions with surface and sub-surface defects calibrated with capacitance trap spectroscopies, atomic force microscopy, and Kelvin probe force microscopy. The measurement of these near-surface states associated with native point defects in the ZnO bulk and those induced by interface chemical bonding is a powerful extension of cathodoluminescence spectroscopy that provides a guide to understanding and controlling ZnO electronic contacts. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：206 / 213

页数：8

共 20 条

[1] Surface cleaning and annealing effects on Ni/AlGaN interface atomic composition and Schottky barrier height [J].

Bradley, ST ;

Goss, SH ;

Hwang, J ;

Schaff, WJ ;

Brillson, LJ .

APPLIED PHYSICS LETTERS, 2004, 85 (08) :1368-1370

[2] Dominant effect of near-interface native point defects on ZnO Schottky barriers [J].

Brillson, L. J. ;

Mosbacker, H. L. ;

Hetzer, M. J. ;

Strzhemechny, Y. ;

Jessen, G. H. ;

Look, D. C. ;

Cantwell, G. ;

Zhang, J. ;

Song, J. J. .

APPLIED PHYSICS LETTERS, 2007, 90 (10)

[3] Localized states at InGaN/GaN quantum well interfaces [J].

Brillson, LJ ;

Levin, TM ;

Jessen, GH ;

Ponce, FA .

APPLIED PHYSICS LETTERS, 1999, 75 (24) :3835-3837

[4] Nanoscale luminescence spectroscopy of defects at buried interfaces and ultrathin films [J].

Brillson, LJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1762-1768

[5] Zn- and O-face polarity effects at ZnO surfaces and metal interfaces [J].

Dong, Yufeng ;

Fang, Z-Q. ;

Look, D. C. ;

Cantwell, G. ;

Zhang, J. ;

Song, J. J. ;

Brillson, L. J. .

APPLIED PHYSICS LETTERS, 2008, 93 (07)

[6] Impact of near-surface native point defects, chemical reactions, and surface morphology on ZnO interfaces [J].

Doutt, D. R. ;

Zgrabik, C. ;

Mosbacker, H. L. ;

Brillson, L. J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04) :1477-1482

[7] Surface traps in vapor-phase-grown bulk ZnO studied by deep level transient spectroscopy [J].

Fang, Z. -Q. ;

Claflin, B. ;

Look, D. C. ;

Dong, Y. F. ;

Mosbacker, H. L. ;

Brillson, L. J. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (06)

[8]

Hovington P, 1997, SCANNING, V19, P1, DOI 10.1002/sca.4950190101

[9] Effects of deep-level defects on ohmic contact and frequency performance of AlGaN/GaN high-electron-mobility transistors [J].

Jessen, GH ;

Fitch, RC ;

Gillespie, JK ;

Via, GD ;

White, BD ;

Bradley, ST ;

Walker, DE ;

Brillson, LJ .

APPLIED PHYSICS LETTERS, 2003, 83 (03) :485-487

[10] Thermally driven defect formation and blocking layers at metal-ZnO interfaces [J].

Mosbacker, H. L. ;

Zgrabik, C. ;

Hetzer, M. J. ;

Swain, A. ;

Look, D. C. ;

Cantwell, G. ;

Zhang, J. ;

Song, J. J. ;

Brillson, L. J. .

APPLIED PHYSICS LETTERS, 2007, 91 (07)

← 1 2 →