Zn- and O-face polarity effects at ZnO surfaces and metal interfaces

被引：55

作者：

Dong, Yufeng ^{[1
]}

Fang, Z-Q. ^{[2
]}

Look, D. C. ^{[2
]}

Cantwell, G. ^{[3
]}

Zhang, J. ^{[3
]}

Song, J. J. ^{[3
]}

Brillson, L. J. ^{[1
,4
,5
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[3] ZN Technol Inc, Brea, CA 92821 USA

[4] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[5] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 07期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2974983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep level transient spectroscopy of ZnO (0001) Zn-and (0001) O-polar surfaces and metal interfaces show systematically higher Zn-face near band edge emission and lower near-surface defect emission. Even with remote plasma decreases of the 2.5 eV near-surface defect emission, (0001)-Zn face emission quality still exceeds that of (0001)-O face. Ultrahigh vacuum-deposited Au and Pd diodes on as-received and O(2)/He plasma-cleaned surfaces display a strong polarity dependence that correlates with defect emissions, traps, and interface chemistry. A comprehensive model accounts for the polarity-dependent transport properties and their correlations with carrier concentration profiles. (C) 2008 American Institute of Physics.

引用

页数：3

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