Influence of oxygen vacancies on Schottky contacts to ZnO

被引：219

作者：

Allen, M. W. ^{[1
]}

Durbin, S. M. ^{[1
]}

机构：

[1] Univ Canterbury, Dept Elect & Comp Engn, MacDiarmid Inst Adv Mat & Nanotechnol, Fukuoka 81401, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 12期

关键词：

D O I：

10.1063/1.2894568

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ni, Ir, Pd, Pt, and silver oxide Schottky contacts were fabricated on the Zn-polar face of hydrothermally grown, bulk ZnO. A relationship was found between the barrier height of the contact and the free energy of formation of its "metal" oxide. This is consistent with the dominating influence of oxygen vacancies (V(O)) which tend to pin the ZnO Fermi level close to the V(O) (+2,0) defect level at approximately 0.7 eV below the conduction band minimum. Therefore, a key goal in the fabrication of high quality Schottky contacts should be the minimization of oxygen vacancies near the metal-ZnO interface. (c) 2008 American Institute of Physics.

引用

页数：3

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